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PHOTOMULTlPLlER TUBE
R1767
S-1 Spectral Response, High Infrared Sensitivity (QE0.08% at 1.06 m) 38mm(1-1/2 Inch) Diameter, 10-Stage, Head-On Type
GENERAL
Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material Structure Dynode Number of Stages Base SuitabIe Socket Description/Value 400 to 1200 800 Ag-O-Cs 34 Borosilicate glass Circular-cage 10 12-pin base JEDEC No. B12-43 E678-12A (supplied) Unit nm nm mm dia.
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage Avarage Anode Current Ambient Temperature Parameter Between Anode and Cathode Between Anode and Last Dynode Value 1500 250 0.01 -30 to +50 Unit Vdc Vdc mA C
CHARACTERISTlCS (at 25
)
Min. 10 Typ. 25 2.4 0.14 1 0.08 5 480 2 105 7000 2.2 37 % A/lm A/W 20000 nA ns ns Max. Unit A/lm mA/W
Cathode Sensitivity
Anode Sensitivity
Parameter Luminous (2856K) Radiant at 800nm Red/White Ratio (Toshiba IR-D80A filter) Quantum Efficiency at 1.06 m Luminous (2856K) Radiant at 800nm
Gain Anode Dark Current (at 4 A/lm) Anode Pulse Rise Time Time Response Electron Transit Time
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Electrodes Ratio 2 1 1 1 1 1 1 1 1 1 1 SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c) 1999 Hamamatsu Photonics K.K.
PHOTOMULTlPLlER TUBE R1767
Figure 1: Typical Spectral Response
100
TPMHB0288EA
CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
10
CATHODE RADIANT SENSITIVITY
1
0.1
QUANTUM EFFICIENCY
0.01
200
400
600
800
1000
WAVELENGTH (nm)
Figure 2: Dimensional Outline and Basing Diagram (Unit: mm)
FACEPLATE 38 1 34MIN.
Socket
(E678 - 12A)
47 40
PHOTOCATHODE
P DY9 5 DY7 4 DY5 3 6 DY10 7 8 DY8 9 DY6 10 DY4 2 1 DY1 12 K
2- 3.2
17
99 2
116MAX.
DY3
11
DY2
12 PIN BASE JEDEC No. B12-43
BOTTOM VIEW (BASING DIAGRAM)
TPMHA0228EA
34
5 8
15
TACCA0009EB
37.3 0.5
HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
TPMH1116E02 DEC. 1999

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